| PART |
Description |
Maker |
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MSM27C3252CZ MSM27C32B52CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V852DRA MR27V852DMA MR27V852DTP MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| CY7C1518JV18-250BZC CY7C1518JV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MC-45D16CB641 MC-45D16CB641KF-C75 MC-45D16CB641KF- |
16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-45D32DC721KFA-C75 MC-45D32DC721KF-C80 MC-45D32D |
32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory
|
| UPD23C16000BLGY-XXX-MJH UPD23C16000BLGY-XXX-MKH UP |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位（字节模式 100万字6位（字模式）
|
NEC, Corp.
NEC Corp.
|
